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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HN200213 Issued Date : 2002.08.01 Revised Date : 2004.09.01 Page No. : 1/4 HMBT28S NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT28S is a NPN silicon transistor, designed for use in general-purpose SPEECH SYNTHSIZER (Voice Rom) IC audio output driver stage amplifier applications. Features * Excellent hFE Linearity * High DC Current Gain * High Power Dissipation SOT-23 Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature ..................................................................................................................... 150 C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25C) ............................................................................................................... 225 mW * Maximum Voltages and Currents (TA=25C) VCBO Collector to Base Voltage ........................................................................................................................... 40 V VCEO Collector to Emitter Voltage ........................................................................................................................ 20 V VEBO Emitter to Base Voltage ................................................................................................................................ 6 V IC Collector Current .......................................................................................................................................... 1.25 A IB Base Current .................................................................................................................................................. 0.4 A Electrical Characteristics (TA=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 hFE3 hFE4 fT Cob Min. 40 20 6 290 300 300 300 100 Typ. 9 Max. 100 100 0.55 1000 MHz pF Unit V V V nA nA V IC=100uA, IE=0 IC=1mA, IB=0 IE=100uA, IC=0 VCB=35V, IE=0 VEB=6V, IC=0 IC=600mA, IB=20mA VCE=1V, IC=1mA VCE=1V, IC=0.1A VCE=1V, IC=0.3A VCE=1V, IC=0.5A VCE=10V, IC=50mA, f=1MHz VCB=10V, f=1MHz, IE=0 *Pulse Test: Pulse Width 380us, Duty Cycle2% Test Conditions Classification of hFE2 Rank (Marking Code) Range B (3FB) 300-550 C (3FC) 500-700 D (3FD) 650-1000 HM28S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 1000 VCE(sat) @ IC=30IB Spec. No. : HN200213 Issued Date : 2002.08.01 Revised Date : 2004.09.01 Page No. : 2/4 Saturation Voltage & Collector Current 75 C 25 C hFE @ VCE=1V o o Saturation Voltage (mV) 125 C o hFE 100 75 C 25 C 125 C o o o 100 0.1 1 10 100 1000 10 0.1 1 10 100 1000 Collector Current-IC (mA) Collector Current-IC (mA) Capacitance & Reverse-Biased Voltage 100 1000 Cutoff Frequency & Collector Current Cutoff Frequency (MHz).. . fT 100 Capacitance (pF) 10 Cob 10 1 0.1 1 10 100 1000 1 1 10 100 1000 Reverse Biased Voltage (V) Collector Current (mA) -VCE=10V PD-Ta 250 Power Dissipation-PD (mW) 200 150 100 50 0 0 50 100 o 150 200 Ambient Temperature-Ta ( C) HM28S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SOT-23 Dimension Marking: A L Rank Code (B,C,D) Spec. No. : HN200213 Issued Date : 2002.08.01 Revised Date : 2004.09.01 Page No. : 3/4 3F 3 Pb Free Mark BS 1 2 Pb-Free: " " (Note) Normal: None V G Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. Pin Style: 1.Base 2.Emitter 3.Collector Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D G H J K L S V Min. 2.80 1.20 0.89 0.30 1.70 0.013 0.085 0.32 0.85 2.10 0.25 Max. 3.04 1.60 1.30 0.50 2.30 0.10 0.177 0.67 1.15 2.75 0.65 *: Typical, Unit: mm C D H 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N K J Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HM28S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HN200213 Issued Date : 2002.08.01 Revised Date : 2004.09.01 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o Dipping time 5sec 1sec 5sec 1sec 260 C +0/-5 C o o HM28S HSMC Product Specification |
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